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Over 30 years of
experiences in
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ultra-high reliable

Many actual results in deliveries to
renowned global manufacturers

Ever since our founding, we have consistently manufactured highly reliable resistors. Our products are highly rated evaluations in a wide range of fields by our integrated production system, which features high mechanical
strength as well as being processed in short delivery times. Having obtained and
maintained certification from the Japan
Aerospace Exploration Agency (JAXA),CRK
products QML, we will dedicate to provide high-quality, highly reliable products. Our products
are utilized in automotive parts, as well as in electronic equipment installed in satellites,
space stations, rockets, and supply vehicles.

SOLUTIONBUSINESS
SOLUTIONBUSINESS
SOLUTIONBUSINESS

200℃ Wire-Bondable Chip Thermistor for
SiC/GaN Modules

  • Features
    Features

    Features

    ■ Optimized for high temperature sensing, control, and compensation.
    ■ Wide temperature ranges from -50℃ to +200℃ are ideal for SiC and GaN.
    ■ The top surface has two electrodes Ag perfectly suitable for wire bonding.
    ■ The bottom surface is metallized with Ag for sintering.
    ■ Empowered by an Alumina base and Glass coating, ensuring high mechanical strength.
    ■ Unparalleled thermal responsiveness due to its compact cubic volume and exceptional heat capacity.
    ■ Thermal Response: Featuring minimal thermal capacity, yet heightened sensor sensitivity.
    ■ AEC-Q200 compliant product.

    Optimized for high temperature sensing,
    control, and compensation
    Wide temperature ranges from -50℃ to
    +200℃ are ideal for SiC and GaN.
    The top surface has two electrodes Ag
    perfectly suitable for wire bonding.
    The bottom surface is metallized with Ag for sintering.
    Empowered by an Alumina base and Glass coating, ensuring high mechanical strength.
    Unparalleled thermal responsiveness due to
    its compact cubic volume and exceptional heat capacity.
    Thermal Response: Featuring minimal
    thermal capacity, yet heightened sensor sensitivity.
    AEC-Q200 compliant product.

  • Features

    Application

    ■ SiC/GaN Power modules
    ■ Inverter for EV and HEV Vehicles
    ■ IGBT（Insulated Gate Bipolar Transistor）
    ■ MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）
    ■ DC-DC Converter
    ■ Temperature management of the On-Board Charger
    ■ Temperature compensation of semiconductors
    ■ Automotive ABS control circuit

    SiC/GaN Power modules
    Inverter for EV and HEV Vehicles
    IGBT（Insulated Gate Bipolar Transistor）
    MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）
    DC-DC Converter
    Temperature management of the On
    -Board Charger
    Temperature compensation of
    semiconductors
    Automotive ABS control circuit

Specification

Chip size(mm) Operating
temperature		 Resistance
at 25℃		 Resistance
tolerance		 B Constant
(25℃/85℃)		 B constant
tolerance		 Rated power
at 25℃		 Maximum
permissible
power		 Thermal
dissipation
constant (in air)
2.0 × 1.2mm
(0.8 × 0.5 inch)		 -50℃ 〜 +200℃ 1K 〜 500kΩ ±1%, ±2%,
±3%, ±5%, ±10%		 3375 〜 4500K ±1%, ±2%,
±3%, ±5%		 130mW 5mW δ ≦ 1.5mW/℃
Chip size(mm)
2.0 × 1.2mm (0.8 × 0.5 inch)
Operating temperature
-50℃ 〜 +200℃
Resistance at 25℃
1K 〜 500kΩ
Resistance tolerance
±1%, ±2%, ±3%, ±5%, ±10%
B Constant (25℃/85℃)
3375〜4500K
B constant tolerance
±1%, ±2%, ±3%, ±5%
Rated power at 25℃
130mW
Maximum permissible power
5mW
Thermal dissipation constant (in air)
δ ≦1.5mW/℃
200℃ Wire-Bondable Chip
Thermistor for SiC/GaN Modules
(PDF：476KB)

TUT Hight temperature heat-resistant Chip
thermistor

  • Features
    Features

    Features

    ■ Max temperature of 200°C
    ■ Applicable to conductive adhesives (Au plating)
    ■ AEC-Q200 compliant product
    ■ Adjustable temperature characteristic curve according to your requirements

    Max temperature of 200°C
    Applicable to conductive adhesives (Au
    plating)
    AEC-Q200 compliant product
    Adjustable temperature characteristic curve according to your requirements

  • Features

    Application

    ■ Power semiconductor
    ■ Temperature compensation
    ■ for IGBT unit
    ■ Automotive ABS control circuit
    ■ Transmission
    ■ Temperature compensation for high temperature specification circuits

    Power semiconductor
    Temperature compensation
    IGBT（Insulated Gate Bipolar Transistor）
    MOSFET（Metal-Oxide-Semiconductor
    Field-Effect Transistor）
    DC-DC Converter
    Temperature management of the On-
    Board Charger
    Temperature compensation of
    semiconductors
    Automotive ABS control circuit

Specification

Operating temperature Chip size : Resistance & B value Rated power Thermal dissipation
constant in air		 Thermal time
constant in air
-40℃〜200℃
(Standard type : 125℃) 		1.6×0.8mm(0.6×0.3inch)：10kohm & 3435K
2.0×1.2mm(0.8×0.5inch)：5kohm & 3435K
3.2×1.6mm(1.2×0.6inch)：5kohm & 3435K 		Rated power：120mW(1.6×0.8mm)、130mW(2.0×1.2mm)
Max allowable power：5mW 		δ ≦ 1.5mW/℃ τ ≦ 5sec
Operating temperature range
-40℃〜200℃（Standard type：125℃）
Chip size : Resistance ＆ B value
1.6×0.8mm(0.6×0.3inch)：10kohm & 3435K
2.0×1.2mm(0.8×0.5inch)：5kohm & 3435K
3.2×1.6mm(1.2×0.6inch)：5kohm & 3435K
Rated power
Rated power：120mW(1.6×0.8mm), 130mW(2.0×1.2mm)
Max allowable power：5mW
Thermal dissipation constant in air
δ≦1.5mW/℃
Thermal time constant in air
τ≦5sec
TUT High temperature heat-
resistant Chip thermistor
(PDF：585MB)